FDS8672S 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS8672S Datasheet PDF : 7 Pages
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Typical Characteristics TJ = 25°C unless otherwise noted
80
60
VGS = 10V
VGS = 4.5V
40
VGS = 4V
20
VGS = 3.5V
VGS = 3V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
0
0
1
2
3
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
4.0
PULSE DURATION = 80µs
3.5
DUTY CYCLE = 0.5%MAX
3.0
VGS = 3V
2.5
VGS = 3.5V
2.0
VGS = 4V
1.5
1.0
0.5
0
VGS = 4.5V
20
40
ID, DRAIN CURRENT(A)
VGS = 10V
60
80
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 18A
VGS = 10V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
15
ID = 18A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
12
9
TJ = 125oC
6
TJ = 25oC
3
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
80
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
60
VDD = 5V
40
TJ = 125oC
20
TJ = 25oC
TJ = -55oC
0
0
1
2
3
4
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
100
VGS = 0V
10
TJ = 125oC
1
0.1
TJ = 25oC
0.01
TJ = -55oC
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2007 Fairchild Semiconductor Corporation
3
FDS8672S Rev.D2
www.fairchildsemi.com
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