FGPF7N60LSDTU 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FGPF7N60LSDTU Datasheet PDF : 9 Pages
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Typical Performance Characteristics (Continued)
Figure 13. Switching Loss vs. Collector Current
1000
Eoff
Eon
Figure 14. Gate Charge Characteristics
15
Common Emitter
R = 43 ohm
L
T = 25oC
C
200V
Vcc = 100V
10
300V
100
4
Common Emitter
V = +/-15V, R = 470Ω
GE
G
T = 25oC
C
T = 125oC
C
8
12
16
Collector Current, I [A]
C
Figure 15. SOA Characteristics
5
0
0
4
8
12
16
20
24
Gate Charge, Q [nC]
g
100
Ic MAX (Pulsed)
10 Ic MAX (Continuous)
50µs
100µs
1ms
1
DC Operation
0.1 Single Nonrepetitive
Pulse Tc = 25oC
Curves must be derated
linearly with increase
in temperature
0.01
0.1
1
10
100
Collector - Emitter Voltage, V [V]
CE
1000
Figure 16. Transient Thermal Impedance of IGBT
10
1 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
1 E -5
single pulse
1 E -4
1 E -3
0.01
0 .1
R ectangular P ulse D uration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
1
10
6
FGPF7N60LSD Rev. A
www.fairchildsemi.com
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