FGP7N60RUFDTU(2006_01) 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FGP7N60RUFDTU
(Rev.:2006_01)

600V, 7A RUF IGBT CO-PAK

Fairchild Semiconductor 

January 2006

FGP7N60RUFD

600V, 7A RUF IGBT CO-PAK

Features

• High speed switching

• Low saturation voltage : VCE(sat) = 1.95 V @ IC = 7A

• High input impedance

• CO-PAK, IGBT with FRD : trr = 50 ns (typ.)

• Short Circuit rated

Applications

Motor controls and general purpose inverters.

Description

Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides

low conduction and switching losses.The device is designed for

Motor applications where ruggedness is a required feature.

C

1

TO-220

1.Gate 2.Collector 3.Emitter

Absolute Maximum Ratings

Symbol

VCES

VGES

IC

ICM (1)

IF

IFM

PD

TJ

Tstg

TL

Description

Collector-Emitter Voltage

Gate-Emitter Voltage

Collector Current

Collector Current

Pulsed Collector Current

@ TC = 25°C

@ TC = 100°C

Diode Continuous Forward Current

Diode Maximum Forward Current

@ TC = 100°C

Maximum Power Dissipation

Maximum Power Dissipation

Operating Junction Temperature

@ TC = 25°C

@ TC = 100°C

Storage Temperature Range

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol

RθJC(IGBT)

RθJC(DIODE)

RθJA

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

©2006 Fairchild Semiconductor Corporation

1

FGP7N60RUFD Rev. A

G

E

FGP7N60RUFD

600

± 20

14

7

21

12

60

69

28

-55 to +150

-55 to +150

300

Units

V

V

A

A

A

A

A

W

W

°C

°C

°C

Typ.

--

--

--

Max.

1.8

3.0

62.5

Units

°C/W

°C/W

°C/W

www.fairchildsemi.com

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