FMMT620(2001) 데이터 시트보기 (PDF) - Zetex => Diodes

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FMMT620
(Rev.:2001)

SuperSOT™ 80V NPN SILICON LOW SATURATION TRANSISTOR

Zetex => Diodes 

FMMT620

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

V(BR)CBO 100

180

V

IC=100␮A

Collector-Emitter Breakdown

Voltage

V(BR)CEO 80

110

V

IC=10mA*

Emitter-Base Breakdown Voltage V(BR)EBO 7

Collector Cut-Off Current

ICBO

Emitter Cut-Off Current

IEBO

Collector Emitter Cut-Off Current ICES

Collector-Emitter Saturation

Voltage

VCE(sat)

Base-Emitter Saturation Voltage VBE(sat)

Base-Emitter Turn-On Voltage

VBE(on)

Static Forward Current Transfer hFE

200

Ratio

300

110

60

20

Transition Frequency

fT

100

8

100

100

100

15

20

45

60

145

185

160

200

0.86 1.0

0.82 0.95

450

450

900

170

90

30

10

160

V

nA

nA

nA

mV

mV

mV

mV

V

V

MHz

IE=100␮A

VCB=80V

VEB=5.5V

VCES=80V

IC=0.1A, IB=10mA*

IC=0.5A, IB=50mA*

IC=1A, IB=20mA*

IC=1.5A, IB=50mA*

IC=1.5A, IB=50mA*

IC=1.5A, VCE=2V*

IC=10mA, VCE=2V*

IC=200mA, VCE=2V*

IC=1A, VCE=2V*

IC=1.5A, VCE=2V*

IC=3A, VCE=2V*

IC=5A, VCE=2V*

IC=50mA, VCE=10V

f=100MHz

Output Capacitance

Cobo

11.5 18

pF

VCB=10V, f=1MHz

Turn-On Time

Turn-Off Time

t(on)

t(off)

86

1128

ns

VCC=10V, IC=500mA

IB1=IB2=25mA

ns

*Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%

ISSUE 1 - JANUARY 2001

4

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