FQA10N80_F109(2006) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FQA10N80_F109 Datasheet PDF : 9 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top : 15.0 V
10.0 V
101
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
※ Notes :
1. 250µ s Pulse Test
10-1
2. TC = 25℃
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
101
150oC
25oC
100
-55oC
10-1
2
※ Notes :
1. V = 50V
DS
2. 250µ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
2.0
1.6
VGS = 10V
VGS = 20V
1.2
0.8
※ Note : TJ = 25℃
0.4
0
5
10
15
20
25
30
ID, Drain Current [A]
101
100
10-1
0.2
150℃
25℃
※ Notes :
1. V = 0V
GS
2. 250µ s Pulse Test
0.4
0.6
0.8
1.0
1.2
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
3600
3200
2800
2400
2000
1600
1200
800
400
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
Coss
Crss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
12
10
VDS = 160V
VDS = 400V
8
VDS = 640V
6
4
2
※ Note : ID = 9.8A
0
0
10
20
30
40
50
60
QG, Total Gate Charge [nC]
3
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FQA10N80 Rev. A1
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