FQB9N50CFTM_WS 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FQB9N50CFTM_WS Datasheet PDF : 8 Pages
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9
※ Notes :
1. VGS = 0 V
2. I = 250 µA
D
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = 10 V
2. ID = 4.5 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
102
101
Operation in This Area
100
is Limited by R
DS(on)
10 µs
100 µs
1ms
10ms
100ms
DC
10-1
10-2
100
* Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
101
102
103
V , Drain-SourceVoltage[V]
DS
Figure 11. Transient Thermal Response Curve
10
8
6
4
2
0
25
50
75
100
125
150
T , Case Temperature [oC]
C
100
D=0.5
0.2
10-1
0.1
0.05
0.02
0.01
10-2
single pulse
PDM
t1
* Notes :
t2
1. Z (t) = 0.72 0C/W Max.
θJC
2. Duty Factor, D=t /t
12
3. T - T = P * Z (t)
JM C
DM
θJC
10-5
10-4
10-3
10-2
10-1
100
101
t , Square Wave Pulse Duration [sec]
1
4
www.fairchildsemi.com
FQB9N50CF Rev. A
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