FQP11N40C(2013) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FQP11N40C Datasheet PDF : 10 Pages
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Package Marking and Ordering Information
Device Marking
FQP11N40C
FQPF11N40C
Device
FQP11N40C
FQPF11N40C
Package
TO-220
TO-220F
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Reel Size
Tube
Tube
Tape Width
N/A
N/A
Quantity
50 units
50 units
Min
Typ
Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA
400
ΔBVDSS Breakdown Voltage Temperature Coeffi-
/ ΔTJ cient
ID = 250 μA, Referenced to 25°C
--
IDSS
Zero Gate Voltage Drain Current
VDS = 400 V, VGS = 0 V
VDS = 320 V, TC = 125°C
--
--
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 μA
2.0
VGS = 10 V, ID = 5.25 A
--
gFS
Forward Transconductance
VDS = 40 V, ID = 5.25 A
--
Dynamic Characteristics
Ciss
Coss
Input Capacitance
Output Capacitance
VDS = 25 V, VGS = 0 V,
--
f = 1.0 MHz
--
Crss
Reverse Transfer Capacitance
--
Switching Characteristics
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 200 V, ID = 10.5 A,
RG = 25 Ω
--
--
--
(Note 4)
--
VDS = 320 V, ID = 10.5 A,
--
VGS = 10 V
--
(Note 4)
--
--
--
V
0.54
--
V/°C
--
1
μA
--
10
μA
--
100
nA
--
-100
nA
--
4.0
V
0.43 0.53
Ω
7.1
--
S
840 1090
pF
250
325
pF
85
110
pF
14
40
ns
89
190
ns
81
170
ns
81
170
ns
28
35
nC
4
--
nC
15
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 10.5 A
trr
Reverse Recovery Time
VGS = 0 V, IS = 10.5 A,
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/μs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 5.7 mH, IAS = 10.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 10.5 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
--
--
10.5
A
--
--
42
A
--
--
1.4
V
--
290
--
ns
--
2.4
--
μC
©2003 Fairchild Semiconductor Corporation
2
FQP11N40C / FQPF11N40C Rev. C1
www.fairchildsemi.com
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