FQPF4N80 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FQPF4N80 Datasheet PDF : 8 Pages
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Typical Characteristics
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
100
6.0 V
Bottom : 5.5 V
10-1
10-2
10-1
※ Notes :
1. 250μs Pulse Test
2. T = 25℃
C
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
7
6
V = 10V
GS
5
V = 20V
GS
4
3
※ Note : T = 25℃
J
2
0
2
4
6
8
10
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1200
1000
800
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
600
C
oss
※ Notes :
400
1. VGS = 0 V
2. f = 1 MHz
C
rss
200
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
100
10-1
2
150oC
25oC
-55oC
※ Notes :
1. VDS = 50V
2. 250μs Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
100
10-1
0.2
150℃
25℃
※ Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 160V
DS
10
V = 400V
DS
8
VDS = 640V
6
4
2
※ Note : ID = 3.9A
0
0
4
8
12
16
20
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, September 2000
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