FQT13N06 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FQT13N06 Datasheet PDF : 8 Pages
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Typical Characteristics
101
Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
100 Bottom : 4.5 V
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
500
400
V = 10V
GS
300
V = 20V
GS
200
100
0
0
※ Note : T = 25℃
J
10
20
30
40
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
600
500
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
400
C
iss
C
oss
300
※ Notes :
1. V = 0 V
GS
2. f = 1 MHz
200
Crss
100
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2002 Fairchild Semiconductor Corporation
FQT13N06 Rev. C0
101
100
150℃
10-1
2
25℃
-55℃
※ Notes :
1. VDS = 25V
2. 250μ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
0.2
150℃
25℃
※ Notes :
1. V = 0V
GS
2. 250μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = 30V
DS
V = 48V
DS
8
6
4
2
※ Note : ID = 13 A
0
0
1
2
3
4
5
6
7
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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