FQT1N60CTF-WS 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FQT1N60CTF-WS Datasheet PDF : 8 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top: 15V.0GSV
10.0 V
8.0 V
7.0 V
100
6.5 V
6.0 V
5.5 V
5.0 V
Bottom: 4.5V
10-1
10-2
10-1
※ Notes :
1. 250µsPulseTest
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
30
25
VGS = 10V
20
15
10
VGS = 20V
5
※Note: TJ =25℃
0
0.0
0.5
1.0
1.5
2.0
2.5
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
250
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
200
Ciss
150
Coss
100
※ Notes ;
50
Crss
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
VDS, Drain-Source Voltage [V]
©2007 Fairchild Semiconductor Corporation
FQT1N60C Rev. C0
Figure 2. Transfer Characteristics
100
150oC
25oC
-55oC
※ Notes :
1. V = 40V
DS
2. 250µs Pulse Test
10-1
2
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
10-1
0.2
150℃
25℃
※ Notes :
1. V = 0V
GS
2. 250µ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V , Source-Drain voltage [V]
SD
Figure 6. Gate Charge Characteristics
12
10
VDS = 120V
VDS = 300V
8
VDS = 480V
6
4
2
※ Note : ID = 1A
0
0
1
2
3
4
5
6
QG, Total Gate Charge [nC]
3
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