FS10VS-9A 데이터 시트보기 (PDF) - Renesas Electronics
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FS10VS-9A Datasheet PDF : 7 Pages
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FS10VS-9A
High-Speed Switching Use
Nch Power MOS FET
Features
• Drive voltage : 10 V
• VDSS : 450 V
• rDS(ON) (max) : 0.73 Ω
• ID : 10 A
Outline
LDPAK(S)-1
4
123
2, 4
1
REJ03G0268-0100
Under development
Rev.1.00
Aug.20.2004
1. Gate
2. Drain
3. Source
4. Drain
3
Applications
DC-DC, PDP, lamp ballast, etc.
Maximum Ratings
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current
Maximum power dissipation
Channel temperature
Storage temperature
Mass
Symbol
VDSS
VGSS
ID
IDM
IDA
PD
Tch
Tstg
—
Ratings
450
±30
10
30
10
100
– 55 to +150
– 55 to +150
1.2
(Tc = 25°C)
Unit
Conditions
V
VGS = 0 V
V
VDS = 0 V
A
A
A
L = 200 µH
W
°C
°C
g
Typical value
Rev.1.00, Aug.20.2004, page 1 of 6
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