FS5AS-10A-T13 데이터 시트보기 (PDF) - Renesas Electronics

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FS5AS-10A-T13

High-Speed Switching Use Nch Power MOS FET

Renesas Electronics 

FS5AS-10A

Electrical Characteristics

Parameter

Drain-source breakdown voltage

Gate-source breakdown voltage

Gate-source leakage current

Drain-source leakage current

Gate-source threshold voltage

Drain-source on-state resistance

Drain-source on-state voltage

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Source-drain voltage

Thermal resistance

Symbol

V(BR)DSS

V(BR)GSS

IGSS

IDSS

VGS(th)

rDS(ON)

VDS(ON)

| yfs |

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VSD

Rth(ch-c)

Min.

500

±30

—

—

2.5

—

—

2.7

—

—

—

—

—

—

—

—

—

Typ.

—

—

—

—

3.0

1.2

2.4

4.5

700

70

15

15

20

90

30

1.5

—

Max.

—

—

±10

1

3.5

1.5

3.0

—

—

—

—

—

—

—

—

2.0

1.92

Unit

V

V

µA

mA

V

Ω

V

S

pF

pF

pF

ns

ns

ns

ns

V

°C/W

(Tch = 25°C)

Test conditions

ID = 1 mA, VGS = 0 V

IG = ±100 µA, VDS = 0 V

VGS = ±25 V, VDS = 0 V

VDS = 500 V, VGS = 0 V

ID = 1 mA, VDS = 10 V

ID = 2 A, VGS = 10 V

ID = 2 A, VGS = 10 V

ID = 2 A, VDS = 10 V

VDS = 25 V, VGS = 10 V,

f = 1MHz

VDD = 200 V, ID = 2 A,

VGS = 10 V,

RGEN = RGS = 50 Ω

IS = 2 A, VGS = 0 V

Channel to case

Rev.1.00, Aug.20.2004, page 2 of 6

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