FS5AS-3 데이터 시트보기 (PDF) - Renesas Electronics

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FS5AS-3

High-Speed Switching Use Nch Power MOS FET

Renesas Electronics 

FS5AS-3

Electrical Characteristics

Parameter

Drain-source breakdown voltage

Gate-source leakage current

Drain-source leakage current

Gate-source threshold voltage

Drain-source on-state resistance

Drain-source on-state voltage

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Source-drain voltage

Thermal resistance

Reverse recovery time

Symbol

V(BR)DSS

IGSS

IDSS

VGS(th)

rDS(ON)

VDS(ON)

| yfs |

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VSD

Rth(ch-c)

trr

Min.

150

—

—

2.0

—

—

—

—

—

—

—

—

—

—

—

—

—

Typ.

—

—

—

3.0

0.28

0.56

6.5

600

100

30

18

18

30

15

1.0

—

85

Max.

—

±0.1

0.1

4.0

0.38

0.76

—

—

—

—

—

—

—

—

1.5

4.17

—

Unit

V

µA

mA

V

Ω

V

S

pF

pF

pF

ns

ns

ns

ns

V

°C/W

ns

(Tch = 25°C)

Test conditions

ID = 1 mA, VGS = 0 V

VGS = ±20 V, VDS = 0 V

VDS = 150 V, VGS = 0 V

ID = 1 mA, VDS = 10 V

ID = 2 A, VGS = 10 V

ID = 2 A, VGS = 10 V

ID = 2 A, VDS = 5 V

VDS = 10 V, VGS = 0 V,

f = 1MHz

VDD = 80 V, ID = 2 A,

VGS = 10 V,

RGEN = RGS = 50 Ω

IS = 2 A, VGS = 0 V

Channel to case

IS = 5 A, dis/dt = –100 A/µs

Rev.1.00, Aug.20.2004, page 2 of 6

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