FSPYE234D1 데이터 시트보기 (PDF) - Intersil
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FSPYE234D1 Datasheet PDF : 8 Pages
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FSPYE234R, FSPYE234F
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
VSD
trr
QRR
TEST CONDITIONS
ISD = 9A
ISD = 9A, dISD/dt = 100A/µs
MIN
TYP
MAX
UNITS
-
-
1.2
V
-
-
310
ns
-
1.9
-
µC
Electrical Specifications up to 300K RAD TC = 25oC, Unless Otherwise Specified
MIN
MAX
PARAMETER
SYMBOL
TEST CONDITIONS
100K RAD
Drain to Source Breakdown Volts (Note 3)
Gate to Source Threshold Volts (Note 3)
Gate to Body Leakage
(Notes 2, 3)
Zero Gate Leakage
(Note 3)
Drain to Source On-State Volts (Notes 1, 3)
Drain to Source On Resistance (Notes 1, 3)
NOTES:
BVDSS
VGS(TH)
IGSS
IDSS
VDS(ON)
rDS(ON)12
VGS = 0, ID = 1mA
VGS = VDS, ID = 1mA
VGS = ±30V, VDS = 0V
VGS = 0, VDS = 200V
VGS = 12V, ID = 9A
VGS = 12V, ID = 6A
250
-
2.0
4.5
-
100
-
25
-
1.98
-
0.215
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.
MIN
MAX
300K RAD
-
-
1.5
4.5
100
50
-
2.97
-
0.270
UNITS
V
V
nA
µA
V
Ω
Single Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5)
TEST
SYMBOL ION SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
Single Event Effects Safe Operating Area SEESOA
Br
37
36
Br
37
36
I
60
32
I
60
32
Au
82
28
Au
82
28
NOTES:
4. Testing conducted at Brookhaven National Labs.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
APPLIED
VGS BIAS
(V)
-10
-15
-2
-8
0
-5
(NOTE 6)
MAXIMUM
VDS BIAS (V)
250
200
200
150
150
100
Performance Curves Unless Otherwise Specified
LET = 37MeV/mg/cm2, RANGE = 36µ
LET = 60MeV/mg/cm2, RANGE = 32µ
LET = 82MeV/mg/cm2, RANGE = 28µ
280 FLUENCE = 1E5 IONS/cm2 (TYPICAL)
TEMP = 25oC
240
200
160
120
80
40
0
0
-4
-8
-12
-16
-20
VGS (V)
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
280
LET = 37 BROMINE
240
200
160
120
80
LET = 82 GOLD
40
LET = 60 IODINE
0
0
-5
-10
-15
-20
-25
-30
VGS (V)
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
3
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