FSQ0265RL(2007_05) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FSQ0265RL
(Rev.:2007_05)
(Rev.:2007_05)
Fairchild Semiconductor
FSQ0265RL Datasheet PDF : 24 Pages
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Electrical Characteristics
TA = 25°C unless otherwise specified.
Symbol
Parameter
SenseFET Section
BVDSS
IDSS
Drain Source Breakdown Voltage
Zero-Gate-Voltage Drain Current
FSQ0365
RDS(ON)
Drain-Source On-State
Resistance(13)
FSQ0265
FSQ0165
FSQ321/311
FSQ0365
CSS
Input Capacitance
FSQ0265
FSQ0165
FSQ321/311
FSQ0365
COSS Output Capacitance
FSQ0265
FSQ0165
FSQ321/311
FSQ0365
CRSS
Reverse Transfer
Capacitance
FSQ0265
FSQ0165
FSQ321/311
FSQ0365
td(on)
Turn-On Delay Time
FSQ0265
FSQ0165
FSQ321/311
FSQ0365
tr
Rise Time
FSQ0265
FSQ0165
FSQ321/311
FSQ0365
td(off)
Turn-Off Delay Time
FSQ0265
FSQ0165
FSQ321/311
FSQ0365
tf
Fall Time
FSQ0265
FSQ0165
FSQ321/311
Control Section
tON.MAX1
tON.MAX2
tB1
tB2
Maximum On Time1
Maximum On Time2
Blanking Time1
Blanking Time2
All but Q321
Q321
All but Q321
Q321
Condition
VCC = 0V, ID = 100µA
VDS = 560V
TJ = 25°C, ID = 0.5A
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 25V, f = 1MHz
VDD = 350V, ID = 25mA
VDD = 350V, ID = 25mA
VDD = 350V, ID = 25mA
VDD = 350V, ID = 25mA
TJ = 25°C
TJ = 25°C
Min. Typ. Max. Unit
650
V
100 µA
3.5 4.5
5.0 6.0
Ω
8.0 10.0
14.0 19.0
315
550
pF
250
162
47
38
pF
25
18
9.0
17.0
pF
10.0
3.8
11.2
20.0
ns
12.0
9.5
34
15
ns
4
19
28.2
55.0
ns
30.0
33.0
32
25
ns
10
42
10.5 12.0 13.5 µs
6.35 7.06 7.77 µs
13.2 15.0 16.8 µs
7.5 8.2
µs
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.4
6
www.fairchildsemi.com
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