FSQ0265RN 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FSQ0265RN
Fairchild Semiconductor
FSQ0265RN Datasheet PDF : 21 Pages
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Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. TA=25°C, unless otherwise specified.
Symbol
Parameter
Min.
VSTR
VDS
VCC
VFB
VSync
Vstr Pin Voltage
Drain Pin Voltage
Supply Voltage
Feedback Voltage Range
Sync Pin Voltage
500
650
-0.3
-0.3
FSQ0365
IDM
Drain Current Pulsed(6)
FSQ0265
FSQ0165
FSQ321
FSQ0365
EAS
Single Pulsed Avalanche Energy(7)
FSQ0265
FSQ0165
FSQ321
PD
Total Power Dissipation
TJ
Recommended Operating Junction Temperature
-40
TA
Operating Ambient Temperature
-40
TSTG
Storage Temperature
-55
ESD
Human Body Model; JESD22-A114
Machine Model; JESD22-A115
Notes:
5. Repetitive rating: Pulse width limited by maximum junction temperature.
6. L=51mH, starting TJ=25°C.
Max.
20
9.0
9.0
12.0
8.0
4.0
1.5
230
140
50
10
1.5
Internally Limited
+85
+150
CLASS 1C
CLASS B
Unit
V
V
V
V
V
A
mJ
W
C
C
C
Thermal Impedance
Symbol
Parameter
8-DIP(7)
θJA
Junction-to-Ambient Thermal Resistance(8)
θJC
Junction-to-Case Thermal Resistance(9)
θJT
Junction-to-Top Thermal Resistance(10)
Notes:
7. All items are tested with the standards JESD 51-2 and 51-10 (DIP).
8. Free-standing with no heat-sink, under natural convection.
9. Infinite cooling condition - refer to the SEMI G30-88.
10. Measured on the package top surface.
Value
80
20
35
Unit
°C/W
© 2007 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321 • Rev. 1.0.6
5
www.fairchildsemi.com
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