GA200NS61U 데이터 시트보기 (PDF) - International Rectifier
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GA200NS61U Datasheet PDF : 9 Pages
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40 VCC = 360V
V GE
TJ
=
=
15V
125
°C
IC = 200A
35
30
25
GA200NS61U
1000 RGG1=2=7OΩh;RmG2 = 0 Ω
VGE = 15V
VCC = 360V
100
10
IC = 400A
IC = 200A
IC = 100A
20
0
10
20
30
40
50
RG , Gate Resistance (O(hmΩ))
Fig. 8 - Typical Switching Losses vs. Gate
Resistance
70 RG1==27OΩh;mRG2 = 0 Ω
TJ = 125° C
60 VCC = 360V
VGE = 15V
50
40
30
20
10
0
0
100
200
300
400
I C , Collector-to-emitter Current (A)
Fig. 10 - Typical Switching Losses vs.
Collector-to-Emitter Current
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1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 9 - Typical Switching Losses vs.
Junction Temperature
600
VGE = 20V
500 TJ = 125°
VCE measured at terminal (Peak Voltage)
400
300
200
SAFE OPERATING AREA
100
0
0
100 200 300 400 500 600 700
VCE, Collector-to-Emitter Voltage (V)
Fig. 11 - Reverse Bias SOA
5
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