GA200HS60S 데이터 시트보기 (PDF) - International Rectifier
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GA200HS60S Datasheet PDF : 6 Pages
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GA200HS60S
Bulletin I27121 rev. B 07/02
16
Vcc = 400V
Ic = 200A
12
8
4
0
0 300 600 900 1200 1500 1800
QG, Total Gate Charge (nC)
Fig. 5 - Typical Gate Charge vs. Gate-to-
Emitter Voltage
80
Tj = 25˚C, Vce = 480V
70 Vge = 15V, Ic = 200A
free-wheeling diode: 30ETH06
60
50
Eoff
40
Eon
30
20
10
0
10 20 30 40 50
RG, Gate Reistance (Ω)
Fig. 6 - Typical Switching Losses vs Gate
Resistance
80
Tj = 125˚C
70 Vce = 480V
Vge = 15V
60 Rge = 10 Ω
Eoff
Free-wheeling diode:
50 30ETH06
40
30
Eon
20
10
0
0 40 80 120 160 200
IC, Collector-to-Emitter Current (A)
Fig. 7 - Typical Switching Losses vs Collector-to-Emitter Current
4
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