GBPC3508 데이터 시트보기 (PDF) - Nell Semiconductor Co., Ltd
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GBPC3508 Datasheet PDF : 4 Pages
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SEMICONDUCTOR
PRIMARY CHARACTERRISTICS
IF(AV)
35A
VRRM
600V to 1600V
IFSM
IR
400A
5 µA
VF
1.1V
TJ max.
150ºC
GBPC35 RRooHHSS
Nell High Power Products
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified output current (Fig.1)
Peak forward surge current single sine-wave superimposed on
rated load
SYMBOL
VRRM
VRMS
VDC
IF(AV)
06
600
420
600
IFSM
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
RMS isolation voltage from case to leads
Operating junction storage temperature range
I2t
VISO
TJ,TSTG
GBPC35
08
10
12
800 1000 1200
560 700 840
800 1000 1200
35
UNIT
16
1600 V
1120 V
1600 V
A
400
A
660
A2s
2500
V
-55 to 150
ºC
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
TEST
SYMBOL
CONDITIONS
06
Maximum instantaneous forward drop per diode
IF = 17.5A
VF
Maximum reverse DC current at rated DC blocking
TA = 25°C
IR
voltage per diode
TA = 150°C
Typical junction capacitance per diode
4V, 1MHz
CJ
GBPC35
08
10
12
1.1
5
500
300
UNIT
16
V
µA
pF
THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
06
Typical thermal resistance
RθJC(1)
GBPC35
08
10
12
1.4
UNIT
16
°C/W
Notes
(1) With heatsink
(2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with
M5 screw
www.nellsemi.com
Page 2 of 4
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