GF14NC60KD 데이터 시트보기 (PDF) - STMicroelectronics
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GF14NC60KD
STMicroelectronics
GF14NC60KD Datasheet PDF : 17 Pages
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STGB10NC60KD - STGP10NC60KD - STGF10NC60KD
Electrical characteristics
Table 5. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 390V, IC = 5A
RG= 10Ω, VGE= 15V, Tj=
25°C
(see Figure 19)
VCC = 390V, IC = 5A
RG= 10Ω, VGE= 15V,
Tj=125°C
(see Figure 19)
Vcc = 390V, IC = 5A,
RGE = 10Ω, VGE =
15V,TJ=25°C
(see Figure 19)
Vcc = 390V, IC = 5A,
RGE=10Ω, VGE =15V,
Tj=125°C
(see Figure 19)
Min. Typ. Max. Unit
17
ns
6
ns
655
A/µs
16.5
ns
6.5
ns
575
A/µs
33
ns
72
ns
82
ns
60
ns
106
ns
136
ns
Table 6. Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Eon(1) Turn-on switching losses
VCC = 390V, IC = 5A
55
µJ
Eoff(2) Turn-off switching losses RG= 10Ω, VGE=15V, Tj=25°C
85
µJ
Ets
Total switching losses
(see Figure 19)
140
µJ
Eon(1)
Eoff(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390V, IC = 5A
RG= 10Ω, VGE= 15V,
Tj= 125°C
(see Figure 19)
87
µJ
162
µJ
249
µJ
1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
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