GS3018K 데이터 시트보기 (PDF) - GTM CORPORATION
부품명
상세내역
제조사
GS3018K Datasheet PDF : 4 Pages
| |||
ISSUED DATE :2005/04/27
REVISED DATE :2005/07/12B
Electrical Characteristics(Tj = 25ć Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
0.06
-
V/к Reference to 25к, ID=1mA
Gate Threshold Voltage
VGS(th)
0.5
-
2.0
V VDS=VGS, ID=250uA
Forward Transconductance
gfs
-
600
-
mS VDS=10V, ID=600mA
Gate-Source Leakage Current
IGSS
-
-
̈́10 uA VGS= ̈́20V
Drain-Source Leakage Current(Tj=25к)
-
-
1
uA VDS=30V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
100 uA VDS=24V, VGS=0
Static Drain-Source On-Resistance
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Parameter
Forward On Voltage2
-
RDS(ON)
-
Qg
-
Qgs
-
Qgd
-
Td(on)
-
Tr
-
Td(off)
-
Tf
-
Ciss
-
Coss
-
Crss
-
Symbol
VSD
Min.
-
-
-
1
0.5
0.5
12
10
56
29
32
8
6
Typ.
-
8
13
1.6
-
-
-
-
-
-
50
-
-
Max.
1.2
VGS=4V, ID=10mA
Ө
VGS=2.5V, ID=1mA
ID=600mA
nC VDS=50V
VGS=4.5V
VDS=30V
ID=600mA
ns VGS=10V
RG=3.3Ө
RD=52Ө
VGS=0V
pF VDS=25V
f=1.0MHz
Unit
Test Conditions
V IS=1.2A, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on FR4 board, tЉ10sec.
2/4
Share Link: 