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GS1K-E 데이터 시트보기 (PDF) - Gulf Semiconductor

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GS1K-E Datasheet PDF : 2 Pages
1 2
GS1J-E THRU GS1M-E
SURFACE MOUNT GLASS
PASSIVATED RECTIFIER
VOLTAGE600V to 1000V
CURRENT1.0A
FEATURE
Ideal for surface mount pick and place application
Low profile package
Built-in strain relief
High surge capability
High temperature soldering guaranteed
260/10sec/at terminals
Halogen Free
SMADO-214AC
MECHANICAL DATA
TerminalPlated axial leads solderable per
MIL-STD 202E, method 208C
Case Molded with UL-94 class V-0 recognized Halogen
Free Epoxy
Polaritycolor band denotes cathode
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25, unless otherwise stated,
for capacitive load, derate current by 20)
SYMBOL
GS1J-E
GS1K-E
Maximum Recurrent Peak Reverse Voltage
Vrrm
600
Maximum RMS Voltage
Vrms
420
Maximum DC blocking Voltage
Vdc
600
Maximum Average Forward Rectified Current
3/8lead length
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load
Maximum Instantaneous Forward Voltage at
rated Forward current
If(av)
Ifsm
Vf
Maximum DC Reverse Current
at rated DC blocking voltage
Ta =25
Ta =125
Ir
Typical Junction Capacitance
(Note 1)
Cj
Typical Thermal Resistance
(Note 2) Rth(jl)
(Note 3) Rth(jc)
Storage and Operating Junction Temperature
Tj, Tstg
Note
1. Measured at 1.0 MHz and applied voltage of 4.0Vdc
2. Thermal Resistance from Junction to terminal mounted on 5×5mm copper pad area
3. Junction to Case
800
560
800
1.0
30.0
1.1
5.0
200.0
15.0
30
50
-50 to +150
GS1M-E
1000
700
1000
units
V
V
V
A
A
V
µA
pF
/W
Rev.A1
www.gulfsemi.com

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