GS74108J 데이터 시트보기 (PDF) - Giga Semiconductor

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GS74108J

512K x 8 4Mb Asynchronous SRAM

Giga Semiconductor 

GS74108TP/J

Truth Table

CE

OE

WE

H

X

X

L

L

H

L

X

L

L

H

H

Note: X: “H” or “L”

DQ1 to DQ8

Not Selected

Read

Write

High Z

VDD Current

ISB1, ISB2

IDD

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Supply Voltage

VDD

-0.5 to +4.6

V

Input Voltage

VIN

-0.5 to VDD+0.5

(≤ 4.6V max.)

V

Output Voltage

VOUT

-0.5 to VDD+0.5

(≤ 4.6V max.)

V

Allowable power dissipation

PD

0.7

W

Storage temperature

TSTG

-55 to 150

oC

Note:

Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended

Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.

Rev: 1.06 7/2000

3/12

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

© 1999, Giga Semiconductor, Inc.

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