H11G3 데이터 시트보기 (PDF) - Fairchild Semiconductor
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H11G3 Datasheet PDF : 7 Pages
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HIGH VOLTAGE
PHOTODARLINGTON OPTOCOUPLERS
DESCRIPTION
The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a
gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor
which has an integral base-emitter resistor to optimize elevated temperature characteristics.
H11G1
H11G2
H11G3
FEATURES
• High BVCEO
- Minimum 100 V for H11G1
- Minimum 80 V for H11G2
- Minimum 55 V for H11G3
• High sensitivity to low input current
Minimum 500 percent CTR at IF = 1 mA
• Low leakage current at elevated temperature
(maximum 100 µA at 80°C)
• Underwriters Laboratory (UL) recognized File# E90700
APPLICATIONS
• CMOS logic interface
• Telephone ring detector
• Low input TTL interface
• Power supply isolation
• Replace pulse transformer
ANODE 1
CATHODE 2
6 BASE
5 COLLECTOR
N/C 3
4 EMITTER
ABSOLUTE MAXIMUM RATINGS
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
Input-Output Isolation Voltage
EMITTER
Forward Input Current
Reverse Input Voltage
Forward Current - Peak (1µs pulse, 300pps)
LED Power Dissipation @ TA = 25°C
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
H11G1
H11G2
H11G3
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
NOTE
All dimensions are in inches (millimeters)
Symbol
TSTG
TOPR
TSOL
PD
VISO
IF
VR
IF(pk)
PD
VCEO
PD
Value
-55 to +150
-55 to +100
260 for 10 sec
260
3.5
5300
60
6.0
3.0
100
1.8
Units
°C
°C
°C
mW
mW/°C
Vac(rms)
mA
V
A
mW
mW/°C
100
V
80
55
200
mW
2.67
mW/°C
7/21/00 200045A
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