H11F3VM 데이터 시트보기 (PDF) - Fairchild Semiconductor
부품명
상세내역
제조사
H11F3VM Datasheet PDF : 10 Pages
| |||
Electrical Characteristics (TA = 25°C unless otherwise specified.)
Individual Component Characteristics
Symbol
Parameter
Test Conditions
Device
EMITTER
VF Input Forward Voltage
IF = 16mA
All
IR Reverse Leakage Current VR = 5V
All
CJ Capacitance
V = 0 V, f = 1.0 MHz
All
OUTPUT DETECTOR
BV4-6 Breakdown Voltage
Either Polarity
I4-6 = 10µA, IF = 0
H11F1M, H11F2M
H11F3M
I4-6 Off-State Dark Current
V4-6 = 15 V, IF = 0
All
V4-6 = 15 V, IF = 0,
All
TA = 100°C
R4-6 Off-State Resistance
V4-6 = 15 V, IF = 0
All
C4-6 Capacitance
V4-6 = 15 V, IF = 0,
All
f = 1MHz
Min.
30
15
300
Typ.*
1.3
50
Max.
1.75
10
50
50
15
Unit
V
µA
pF
V
nA
µA
MΩ
pF
Transfer Characteristics
Symbol Characteristics
DC CHARACTERISTICS
R4-6 On-State Resistance
Test Conditions
IF = 16mA,
I4-6 = 100µA
R6-4 On-State Resistance
IF = 16mA,
I6-4 = 100µA
Resistance, non-linearity
and assymetry
AC CHARACTERISTICS
ton Turn-On Time
toff Turn-Off Time
IF = 16mA,
I4-6 = 25µA RMS,
f = 1kHz
RL = 50Ω, IF = 16mA,
V4-6 = 5V
RL = 50Ω, IF = 16mA,
V4-6 = 5V
Device
H11F1M
H11F2M
H11F3M
H11F1M
H11F2M
H11F3M
All
All
All
Min Typ* Max Units
200
Ω
330
470
200
Ω
330
470
0.1
%
25
µS
25
µS
Isolation Characteristics
Symbol
Characteristic
V ISO
R ISO
C ISO
Isolation Voltage
Isolation Resistance
Isolation Capacitance
*All Typical values at TA = 25°C
Test Conditions
f = 60Hz, t = 1 sec.
VI-O = 500 VDC
f = 1MHz
Device
All
All
All
Min.
7500
10 11
Typ.*
0.2
Max.
Units
VACPEAK
Ω
pF
©2007 Fairchild Semiconductor Corporation
H11FXM Rev. 1.0.0
3
www.fairchildsemi.com
Share Link: 