H6968S 데이터 시트보기 (PDF) - Hi-Sincerity Mocroelectronics

부품명

상세내역

제조사

H6968S

Dual N-Channel Enhancement-Mode MOSFET (20V, 6.5A) (Battery Switch, ESD Protected)

Hi-Sincerity Mocroelectronics 

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : MOS200510

Issued Date : 2005.10.01

Revised Date : 2005.10.06

Page No. : 1/4

H6968S / H6968CS

Dual N-Channel Enhancement-Mode MOSFET (20V, 6.5A)

•

8-Lead Plastic SO-8

(Battery Switch, ESD Protected)

Package Code: S

Features

• RDS(on)=32mΩ@VGS=2.5V, ID=5.5A

• RDS(on)=24mΩ@VGS=4.5V, ID=6.5A

• Advanced Trench Process Technology

• High Density Cell Design for Ultra Low On-Resistance

• Specially Designed for Li ion Battery Packs Use

• Designed for Battery Switch Appliactions

• ESD Protected

Absolute Maximum Ratings (TA=25oC, unless otherwise noted)

Symbol

Parameter

VDS

Drain-Source Voltage

VGS

Gate-Source Voltage

ID

Drain Current (Continuous)

IDM

Drain Current (Pulsed) *1

Total Power Dissipation @TA=25oC

PD

Total Power Dissipation @TA=75oC

Tj, Tstg

RθJA

Operating and Storage Temperature Range

Thermal Resistance Junction to Ambient (PCB mounted)*2

*1: Maximum DC current limited by the package

*2: 1-in2 2oz Cu PCB board

Ratings

20

±12

6.5

30

2

1.3

-55 to +150

62.5

Pin Assignment & Internal Schematic Diagram

Part No.

H6968S

Pin Assignment

S2 1

G2 2

8 D2

7 D2

S1 3

G1 4

6 D1

5 D1

Top View

Internal Schematic Diagram

D1

D2

G1

G2

S1

S2

D

D

S2 1

8D

G2 2

7D

G1

G2

H6968CS

S1 3

6D

G1 4

5D

Top View

S1

S2

Units

V

V

A

A

W

W

°C

°C/W

H6968S, H6968CS

HSMC Product Specification

Share Link: