H7N0308AB 데이터 시트보기 (PDF) - Renesas Electronics
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H7N0308AB Datasheet PDF : 7 Pages
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H7N0308AB
Static Drain to Source on State Resistance
vs. Temperature
12
Pulse Test
10
ID = 10 A, 20 A
ID = 50 A
8
VGS = 4.5 V
6
4
2
10 V
10 A, 20 A, 50 A
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
50
20
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
50
ID = 70 A
40
20
VGS
16
VDD = 5 V
30
10 V
12
20 V
VDS
20
8
10
VDD = 20 V
4
10 V
5V
0
0
0
20
40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
1000
300
Tc = –25°C
100
30
75°C
25°C
10
3
VDS = 10 V
Pulse Test
1
1
3
10
30
100
Drain Current ID (A)
10000
3000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1000
Coss
300
100
0
Crss
VGS = 0
f = 1 MHz
10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
1000
VGS = 10 V, VDS = 10 V
500 Rg= 4.7 Ω, duty ≤ 1 %
tr
200
td(off)
100
50
td(on)
20
tf
10
0.1 0.3 1 3 10 30 100
Drain Current ID (A)
Rev.4.00 Sep 07, 2005 page 4 of 6
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