H7N0311LS 데이터 시트보기 (PDF) - Renesas Electronics
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H7N0311LS Datasheet PDF : 8 Pages
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H7N0311LD, H7N0311LS, H7N0311LM
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
50
10 V
6V
40
4V
Pulse Test
30
3.5 V
20
VGS = 3 V
10
0
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1.0
Pulse Test
0.8
0.6
0.4
ID = 50 A
0.2
20 A
10 A
0
0
4
8
12 16 20
Gate to Source Voltage VGS (V)
Rev.5.00 Apr 07, 2006 page 3 of 7
Maximum Safe Operation Area
500
10 µs
100
10
1
1 ms
DC OperatioPnW = 10
Operation in
100
ms
µs
this area is
limited by RDS (on)
0.1
Tc = 25°C
1 shot Pulse
0.01
0.1 0.3 1 3 10 30 100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50
VDS = 10 V
Pulse Test
40
30
20
Tc = 75°C
10
25°C
–25°C
0
0
1
2
3
4
5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
VGS = 5 V
10
5
10 V
2
1
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current ID (A)
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