HA-2548/883 데이터 시트보기 (PDF) - Intersil
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HA-2548/883 Datasheet PDF : 7 Pages
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HA-2548/883
Die Characteristics
DIE DIMENSIONS:
85 mils x 91 mils x 19 mils
2160µm x 2320µm x 483µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ± 2kÅ
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ ± 2kÅ
Nitride Thickness: 3.5kÅ ± 1.5kÅ
WORST CASE CURRENT DENSITY:
3.6 x 104 A/cm2
SUBSTRATE POTENTIAL (Powered Up): V- (Note)
TRANSISTOR COUNT: 60
PROCESS: Bipolar, Dielectric Isolation
NOTE: The Substrate may be left floating (Insulating Die Mount) or it may be mounted on a conductor at a V- potential.
Metallization Mask Layout
HA-2548/883
+BAL
COMP
V+
-IN
+IN
OUT
V-
-BAL
Spec Number 511069-883
5
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