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HAF2012 데이터 시트보기 (PDF) - Renesas Electronics
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HAF2012
Silicon N Channel MOS FET Series Power Switching
Renesas Electronics
HAF2012 Datasheet PDF : 10 Pages
1
2
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4
5
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7
8
9
10
HAF2012(L), HAF2012(S)
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
V
DSS
V
GSS
V
GSS
I
D
I
Note1
D(pulse)
I
DR
Pch
Note2
Channel temperature
Tch
Storage temperature
Tstg
Note: 1. PW
≤
10
µ
s, duty cycle
≤ 1 %
2. Value at Ta = 25
°
C
Ratings
Unit
60
V
16
V
–2.8
V
20
A
40
A
20
A
50
W
150
°
C
–55 to +150
°
C
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Symbol
V
IH
V
IL
I
IH1
I
IH2
I
IL
I
IH(sd)1
I
IH(sd)2
T
sd
V
OP
Min
3.5
—
—
—
—
—
—
—
3.5
Typ
—
—
—
—
—
0.8
0.35
175
—
Max
—
1.2
100
50
1
—
—
—
13
Unit
V
V
µ
A
µ
A
µ
A
mA
mA
°
C
V
Test Conditions
Vi = 8V, V
DS
= 0
Vi = 3.5V, V
DS
= 0
Vi = 1.2V, V
DS
= 0
Vi = 8V, V
DS
= 0
Vi = 3.5V, V
DS
= 0
Channel temperature
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