HAF2012 데이터 시트보기 (PDF) - Renesas Electronics

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HAF2012

Silicon N Channel MOS FET Series Power Switching

Renesas Electronics 

HAF2012(L), HAF2012(S)

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Drain current

Drain current

Drain to source breakdown

voltage

I D1

I D2

V(BR)DSS

Gate to source breakdown

voltage

V(BR)GSS

Gate to source breakdown

voltage

V(BR)GSS

Gate to source leak current

Input current (shut down)

Zero gate voltege drain

current

I GSS1

I GSS2

I GSS3

I GSS4

I GS(op)1

I GS(op)2

I DSS

Gate to source cutoff voltage VGS(off)

Static drain to source on state RDS(on)

resistance

Static drain to source on state RDS(on)

resistance

Forward transfer admittance |yfs|

Output capacitance

Coss

Min

10

—

60

16

–2.8

—

—

—

—

—

—

—

1.0

—

—

6

—

Typ

—

—

—

—

—

—

—

—

—

0.8

0.35

—

—

50

30

12

630

Max Unit

—

A

10

mA

—

V

—

V

—

V

100

µA

50

µA

1

µA

–100 µA

—

mA

—

mA

250

µA

2.25 V

65

mΩ

43

mΩ

—

S

—

pF

Turn-on delay time

t d(on)

Rise time

tr

Turn-off delay time

t d(off)

Fall time

tf

Body–drain diode forward VDF

voltage

—

7.5

—

µs

—

29

—

µs

—

34

—

µs

—

26

—

µs

—

1.0

—

V

Body–drain diode reverse trr

recovery time

—

110

—

ns

Over load shut down

t os1

—

1.8

—

ms

operation time Note4

t os2

—

0.7

—

ms

Note: 3. Pulse test

4. Include the junction temperature rise of the over loaded condition.

• See characteristic curve of HAF2001.

Test Conditions

VGS = 3.5V, VDS = 2V

VGS = 1.2V, VDS = 2V

ID = 10mA, VGS = 0

IG = 100µA, VDS = 0

IG = –100µA, VDS = 0

VGS = 8V, VDS = 0

VGS = 3.5V, VDS = 0

VGS = 1.2V, VDS = 0

VGS = –2.4V, VDS = 0

VGS = 8V, VDS = 0

VGS = 3.5V, VDS = 0

VDS = 50 V, VGS = 0

ID = 1mA, VDS = 10V

ID = 10A, VGS = 4V Note3

ID = 10A, VGS = 10V Note3

ID = 10A, VDS = 10V Note3

VDS = 10V , VGS = 0

f = 1 MHz

ID = 5A, VGS = 5V

RL = 6Ω

IF = 20A, VGS = 0

IF = 20A, VGS = 0

diF/ dt =50A/µs

VGS = 5V, VDD = 12V

VGS = 5V, VDD = 24V

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