HAF2017 데이터 시트보기 (PDF) - Renesas Electronics

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HAF2017

Silicon N Channel MOS FET Series Power Switching

Renesas Electronics 

HAF2017(L), HAF2017(S)

Silicon N Channel Power MOS FET

Power Switching

REJ03G0234-0200Z

(Previous ADE-208-1637 (Z))

Rev.2.00

Apr.13.2004

Descriptions

This FET has the over temperature shutdown capability sensing the junction temperature. This FET has the built-in

over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of

high junction temperature like applying over power consumption, over current etc..

Features

• Logic level operation (4 to 6 V Gate drive)

• High endurance capability against to the short circuit

• Built-in the over temperature shutdown circuit

• Latch type shutdown operation (Need 0 voltage recovery)

Outline

D

G

Gate Resistor

Tempe-

rature

Sensing

Circuit

Latch

Circuit

Gate

Shut-

down

Circuit

S

LDPAK(L)

4

LDPAK(S)-1

4

1

2

3

1

2

3

1. Gate

2. Drain

3. Source

4. Drain

Rev.2.00, Apr.13.2004, page 1 of 8

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