FT0408DD00 데이터 시트보기 (PDF) - Formosa Technology
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FT0408DD00 Datasheet PDF : 5 Pages
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FT04...D
SURFACE MOUNT TRIAC
Electrical Characteristics
SYMBOL
PARAMETER
CONDITIONS
Quadrant
SENSITIVITY Unit
07 08 11 14
IGT (1)
Gate Trigger Current
VD = 12 VDC , RL = 30Ω
Tj = 25 ºC
Q1÷Q3 MAX 5 10 25 35 mA
Q4
7
mA
IDRM /IRRM Off-State Leakage Current VR = VDRM ,
VR = VRRM ,
Tj = 125 ºC
Tj = 25 ºC
MAX
MAX
1
mA
5
µA
Vto (2)
Threshold Voltage
Tj = 125 ºC
MAX
0.9
V
Rd(2)
VTM (2)
VGT
VGD
Dynamic Resistance
On-state Voltage
Gate Trigger Voltage
Gate Non Trigger Voltage
Tj = 125 ºC
MAX
IT = 5.5 Amp, tp = 380 µs, Tj = 25 ºC
MAX
VD = 12 VDC , RL = 30Ω, Tj = 25 ºC Q1÷Q3 MAX
VD = VDRM , RL = 3.3KΩ, Tj = 125 ºC Q1÷Q3 MIN
120
mΩ
1.6
V
1.3
V
0.2
V
IH (2)
Holding Current
IL
Latching Current
IT = 100 mA , Gate open, Tj = 25 ºC
MAX 10 15 25 35 mA
IG = 1.2 IGT, Tj = 25 ºC
Q1,Q3 MAX 10 20 25 50 mA
dv / dt (2) Critical Rate of Voltage Rise VD = 0.67 x VDRM , Gate open
Tj = 125 ºC
Q2 MAX 15 30 50 60
MIN 20 100 200 400 V/µs
(dI/dt)c (2) Critical Rate of Current Rise (dv/dt)c= 0.1 V/µs
Tj = 125 ºC
MIN 1.8 2.7 4.4 - A/ms
(dv/dt)c= 10 V/µs
Tj = 125 ºC
MIN 0.9 2.0 2.7 -
without snubber
Tj = 125 ºC
MIN - - - 2.5
tgd
Gate Controlled
Delay Time
IG = 2xIGT, VD = VDRM
diG/dt = 3 A/µs, ITM = 5.5 A
Q1÷Q3 TYP
µs
2
Rth(j-c)
Thermal Resistance
Junction-Case
2.6
ºC/W
Rth(j-a)
Thermal Resistance
Junction-Ambient
70
ºC/W
(1) Minimum IGT is guaranted at 5% of IGT max.
(2) For either polarity of electrode MT2 voltage with reference to electrode MT1.
PART NUMBER INFORMATION
FAGOR
SCR
CURRENT
F T 04
11 B D 00 TR
PACKAGING
FORMING
CASE
VOLTAGE
SENSITIVITY
Jul - 03
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