Philips Semiconductors
Universal divider
Product specification
HEF4751V
LSI
DC CHARACTERISTICS
VSS = 0 V
Tamb (°C)
VDD
V
VOH
V
VOL
V
SYMBOL
−40
+ 25
+ 85
MIN. MAX. MIN. MAX. MIN. MAX.
Output (sink)
4,75
0,4
1,6
current LOW
5
10
0,4 IOL
1,7
0,5
2,9
Output (source)
5 4,6
1,0
current HIGH
5 2,5
10 9,5
3,0
−IOH
3,0
1,4
1,1
mA
1,5
1,2
mA
2,7
2,2
mA
0,85
0,55
mA
2,5
1,7
mA
2,5
1,7
mA
AC CHARACTERISTICS
VSS = 0 V; Tamb = 25 °C; input transition times ≤ 20 ns
PARAMETER
VDD
V
SYMBOL MIN.
Propagation delay
IN → OSY
5
10
tPHL
HIGH to LOW
Output transition
times
HIGH to LOW
5
10
tTHL
LOW to HIGH
5
10
tTLH
Maximum input
5
fmax
4
frequency; IN
10
12
Maximum input
5
fmax
2
frequency; IN
10
6
Maximum input
5
fmax
0,15
frequency; PC
10
0,5
TYP.
135
45
30
12
45
20
8
24
4
12
0,3
1,0
MAX. UNIT
270 ns
90 ns
60 ns
25 ns
90 ns
40 ns
MHz
MHz
MHz
MHz
MHz
MHz
CL = 10 pF
CL = 50 pF
CL = 50 pF
δ = 50%
C0b ratio > 1
δ = 50%
C0b ratio = 1
VDD
V
Dynamic power
dissipation per
5
package (P)
10
January 1995
TYPICAL FORMULA FOR P (µW)
1 200 fi + ∑ (foCL) × VDD2
5 400 fi + ∑ (foCL) × VDD2
10
where
fi = input freq. (MHz)
fo = output freq. (MHz)
CL = load capacitance (pF)
∑ (foCL) = sum of outputs
VDD = supply voltage (V)