HGT1S7N60A4S9A 데이터 시트보기 (PDF) - Fairchild Semiconductor
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HGT1S7N60A4S9A Datasheet PDF : 8 Pages
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HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4
Typical Performance Curves Unless Otherwise Specified (Continued)
1.4
FREQUENCY = 1MHz
1.2
1.0
0.8
CIES
0.6
0.4
0.2
COES
CRES
0
0
20
40
60
80
100
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
2.8
DUTY CYCLE < 0.5%, TJ = 25oC
PULSE DURATION = 250µs,
2.6
2.4
2.2
2.0
1.8
9
ICE = 14A
ICE = 7A
ICE = 3.5A
10
11
12
13
14
15
16
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
100
0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-210-5
SINGLE PULSE
10-4
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-2
10-1
100
101
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
RHRP660
RG = 25Ω
L = 1mH
+
-
VDD = 390V
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
©2004 Fairchild Semiconductor Corporation
90%
VGE
VCE
ICE
EOFF
10%
EON2
90%
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 21. SWITCHING TEST WAVEFORMS
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2
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