10N40C1D 데이터 시트보기 (PDF) - Intersil
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10N40C1D Datasheet PDF : 6 Pages
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Specifications HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
Electrical Specifications TC = +25oC, Unless Otherwise Specified
LIMITS
HGTP10N40C1D,
HGTP10N40E1D
HGTP10N50C1D,
HGTP10N50E1D
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX UNITS
Collector-Emitter Breakdown Voltage
BVCES IC = 1mA, VGE = 0
400
-
500
-
V
Gate Threshold Voltage
VGE(TH) VGE = VCE, IC = 1mA
2.0
4.5
2.0
4.5
V
Zero Gate Voltage Collector Current
ICES
VCE = 400V, TC = +25oC
-
250
-
-
µA
VCE = 500V, TC = +25oC
-
-
-
250
µA
VCE = 400V, TC = +125oC
-
1000
-
-
µA
VCE = 500V, TC = +125oC
-
-
-
1000
µA
Gate-Emitter Leakage Current
IGES
VGE = ±20V, VCE = 0
-
100
-
100
nA
Collector-Emitter On Voltage
VCE(ON) IC = 10A, VGE = 10V
-
2.5
-
2.5
V
IC = 17.5A, VGE = 20V
-
3.2
-
3.2
V
Gate-Emitter Plateau Voltage
VGEP
IC = 5A, VCE = 10V
-
6 (Typ)
-
6 (Typ)
V
On-State Gate Charge
QG(ON) IC = 5A, VCE = 10V
-
19 (Typ)
-
19 (Typ) nC
Turn-On Delay Time
Rise Time
tD(ON)I IC = 10A, VCE(CLP) = 300V,
-
50
-
50
ns
L = 50µH, TJ = +100oC,
tRI
VGE = 10V, RG = 50Ω
-
50
-
50
ns
Turn-Off Delay Time
tD(OFF)I
-
400
-
400
ns
Fall Time
tFI
40E1D, 50E1D
680 (Typ) 1000 680 (Typ) 1000
ns
40C1D, 50C1D
400 (Typ) 500 400 (Typ) 500
ns
Turn-Off Energy Loss per Cycle (Off
Switching Dissipation =
WOFF x Frequency)
WOFF
IC = 10A, VCE(CLP) = 300V,
L = 50µH, TJ = +100oC,
VGE = 10V, RG = 50Ω
40E1D, 50E1D
1810 (Typ)
µJ
40C1D, 50C1D
Thermal Resistance Junction-to-Case
RθJC
-
Diode Forward Voltage
VEC
IEC = 10A
-
Diode Reverse Recovery Time
tRR
IEC = 10A, di/dt = 100A/µs
-
1070 (Typ)
1.67
-
2
-
100
-
1.67
2
100
µJ
oC/W
V
ns
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3-21
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