HITK0201MP 데이터 시트보기 (PDF) - Renesas Electronics
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HITK0201MP Datasheet PDF : 7 Pages
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HITK0201MP
Main Characteristics
Maximum Channel Power
Dissipation Curve
1
0.8
0.6
0.4
0.2
0
0
50
100
150
Ambient Temperature Ta (°C)
*When using the glass epoxy board (FR-4: 40 × 40 × 1 mm)
Typical Output Characteristics
15
2.2 V
3V
12
10 V
2.0 V
Pulse Test
Tc = 25°C
9
1.8 V
6
1.6 V
3
1.4 V
VGS = 0 V
0
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics (2)
1
VDS = 10 V
Pulse Test
0.1
0.01 Tc = 75°C
0.001
25°C
–25°C
0.0001
0 0.5 1 1.5 2 2.5 3
Gate to Source Voltage VGS (V)
Preliminary
Maximum Safe Operation Area
100
Operation in this area
is limited by RDS(on)
100 μs
10
1
DPCWO=pe1r0a10t0iommn1ssms
0.1
Ta = 25°C
1 Shot Pulse
0.01
0.01
0.1
1
10
100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics (1)
15
VDS = 10 V
Pulse Test
12
9
6
3
Tc = 75°C
25°C
0
–25°C
0 0.5 1 1.5 2 2.5 3 3.5 4
Gate to Source Voltage VGS (V)
Gate to Source Cutoff Voltage vs.
Case Temperature
1.5
VDS = 10 V
Pulse Test
1
ID = 10 mA
0.5
1 mA
0.1 mA
–025 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0479EJ0200 Rev.2.00
May 09, 2013
Page 3 of 6
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