HLB1211 데이터 시트보기 (PDF) - Hi-Sincerity Mocroelectronics
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HLB1211 Datasheet PDF : 3 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9027-B
Issued Date : 1996.11.06
Revised Date : 2000.11.01
Page No. : 1/3
HLB121I
NPN Triple Diffused Planar Type High Voltage Transistor
Description
The HLB121I is a medium power transistor designed for use in
switching applications.
Features
• High breakdown voltage
• Low collector saturation voltage
• Fast switching speed
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 10 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 600 V
BVCEO Collector to Emitter Voltage................................................................................. 400 V
BVEBO Emitter to Base Voltage ........................................................................................... 6 V
IC Collector Current (DC)............................................................................................... 300 mA
IC Collector Current (Pulse)........................................................................................... 600 mA
IB Base Current (DC)....................................................................................................... 40 mA
IB Base Current (Pulse)................................................................................................. 100 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
600
-
BVCEO
400
-
BVEBO
6
-
ICBO
-
-
ICEO
-
-
IEBO
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VBE(sat)
-
-
*hFE1
8
-
*hFE2
10
-
Max.
-
-
-
10
10
10
400
750
1
-
36
Unit
Test Conditions
V IC=100uA
V IC=10mA
V IE=10uA
uA VCB=550V
uA VCB=400V
uA VEB=6V
mV IC=50mA, IB=10mA
mV IC=100mA, IB=20mA
V IC=50mA, IB=10mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
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