HLB122T 데이터 시트보기 (PDF) - Hi-Sincerity Mocroelectronics
부품명
상세내역
제조사
HLB122T Datasheet PDF : 3 Pages
| |||
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200208
Issued Date : 1998.07.01
Revised Date : 2002.05.08
Page No. : 1/3
HLB122T
NPN Triple Diffused Planar Type High Voltage Transistor
Description
The HLB122T is a medium power transistor designed for use in switching
applications.
Features
• High breakdown voltage
• Low collector saturation voltage
• Fast switching speed
TO-126
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ........................................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................................................ +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 20 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage ................................................................................................. 600 V
BVCEO Collector to Emitter Voltage .............................................................................................. 400 V
BVEBO Emitter to Base Voltage ....................................................................................................... 6 V
IC Collector Current (DC)............................................................................................................ 800 mA
IC Collector Current (Pulse)...................................................................................................... 1600 mA
IB Base Current (DC).................................................................................................................. 100 mA
IB Base Current (Pulse) .............................................................................................................. 200 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
600
-
BVCEO
400
-
BVEBO
6
-
ICBO
-
-
ICEO
-
-
IEBO
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VBE(sat)
-
-
*hFE1
10
-
*hFE2
10
-
tf
-
-
Max.
-
-
-
10
10
10
400
800
1
40
-
0.6
Classification of hFE1
Rank
Range
B1
10-17
B2
13-22
Unit
V
V
V
uA
uA
uA
mV
mV
V
uS
B3
18-27
Test Conditions
IC=100uA
IC=10mA
IE=10uA
VCB=600V
VCE=400V
VEB=6V
IC=100mA, IB=20mA
IC=300mA, IB=60mA
IC=100mA, IB=20mA
VCE=10V, IC=0.1A
VCE=10V, IC=0.5A
VCC=100V, IC=0.3A,IB1=-IB2=0.06A
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
B4
23-32
B5
28-37
B6
33-40
HLB122T
HSMC Product Specification
Share Link: 