MJE13007G(2010) 데이터 시트보기 (PDF) - Unisonic Technologies

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MJE13007G
(Rev.:2010)

NPN SILICON TRANSISTOR

Unisonic Technologies 

MJE13007

NPN SILICON TRANSISTOR

Table 1. Test Conditions for Dynamic Performance

REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING

RESISTIVE

SWITCHING

BVCEO (SUS)

Inductive

Switching

RBSOA

L=10mH L=20mH

L=500mH

RB2=8

RB2=0

RB2=0

VCC=20V VCC=15V

VCC=15Volts

IC(pk)=100mA RB1 selected RB1 selected

for desired IB1 for desired IB1

VCC=125V

RC=25Ω

D1=1N5820 OR EQUIV

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