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CT30TM-8

STROBE FLASHER USE

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MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR

CT30TM-8

STROBE FLASHER USE

PERFORMANCE CURVES

MAXIMUM PULSE COLLECTOR CURRENT

200

CM = 1000µF

160 TC <= 50°C

120

TC =< 70°C

80

40

0

0

10 20 30 40 50

GATE-EMITTER VOLTAGE VGE (V)

Figure 1

MAXIMUM PULSE COLLECTOR CURRENT

2000

1600

1200

800

400 VCM = 350V

TC <= 70°C

VGE >= 28V

0

120 140 160 180 200 220

PULSE COLLECTOR CURRENT ICP (A)

Figure 2

APPLICATION EXAMPLE

TRIGGER Vtrig

SIGNAL

IXe

Vtrig

RG

VG

VCE

IGBT

CM

+

VCM

–

IGBT GATE VG

VOLTAGE

Xe TUBE Ixe

CURRENT

RECOMMEND CONDITION

VCM = 330V

IP = 160A

CM = 800µF

VGE = 28V

MAXIMUM CONDITION

360V

180A

1000µF

Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current.

And reverse gate current during turn-off must be kept less than 1A.

(In general, it is satisfied if RG ≥ 30Ω)

Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide.

So please handle carefully not to suffer from electrostatic charge.

Notice 3. The operation life should be endured 5,000 shots under the charge current

(Ixe ≤ 180A : full luminescence condition) of main condenser (CM=1000µF).

Repetition period under full luminescence condition is over 3 seconds.

Notice 4. Total operation hours must be applied within 5,000 hours.

Feb.1999

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