HM5116405 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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HM5116405 Datasheet PDF : 35 Pages
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HM5116405 Series, HM5117405 Series
DC Characteristics
(Ta = 0 to +70 C, VCC = 5 V 10%, VSS = 0 V) (HM5117405 Series)
HM5117405
-5
-6
-7
Parameter
Symbol Min Max Min Max Min Max Unit Test conditions
Operating current*1, *2
Standby current
I CC1
— 100 — 90 — 80 mA
tRC = min
I CC2
— 2 — 2 — 2 mA
TTL interface
,
= VIH
Dout = High-Z
— 1 — 1 — 1 mA
CMOS interface
,
VCC – 0.2 V
Dout = High-Z
Standby current
(L-version)
I CC2
— 150 — 150 — 150 A
CMOS interface
,
VCC – 0.2 V
Dout = High-Z
-only refresh current*2 ICC3
Standby current*1
I CC5
— 100 — 90 — 80 mA
— 5 — 5 — 5 mA
tRC = min
= VIH
= VIL
Dout = enable
-before- refresh
I CC6
current
— 100 — 90 — 80 mA
tRC = min
EDO page mode current*1, *3 ICC7
Battery backup current
I CC10
Input leakage current
I LI
Output leakage current
I LO
— 90 — 80 — 75 mA
— 350 — 350 — 350 A
–10 10 –10 10 –10 10 A
–10 10 –10 10 –10 10 A
tHPC = min
CMOS interface
Dout = High-Z, CBR
refresh: tRC = 62.5 s
tRAS 0.3 s
0 V Vin 7 V
0 V Vin 7 V
Dout = disable
Output high voltage
VOH
2.4 VCC 2.4 VCC 2.4 VCC V
High Iout = –2 mA
Output low voltage
VOL
0 0.4 0 0.4 0 0.4 V
Low Iout = 2 mA
Notes : 1. ICC depends on output load condition when the device is selected. ICC max is specified at the
output open condition.
2. Address can be changed once or less while
3. Address can be changed once or less while
= VIL.
= VIH.
9
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