HM6264BLP 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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HM6264BLP

64 k SRAM (8-kword × 8-bit)

Hitachi -> Renesas Electronics 

HM6264B Series

DC Characteristics (Ta = 0 to +70°C, VCC = 5 V ±10%, VSS = 0 V)

Parameter

Symbol Min Typ*1 Max Unit Test conditions

Input leakage current

|ILI|

Output leakage current |ILO|

Operating power supply

current

Average operating power

supply current

I CCDC

I CC1

I CC2

Standby power supply

I SB

current

——2

µA Vin = VSS to VCC

——2

µA CS1 = VIH or CS2 = VIL or OE = VIH or

WE = VIL, VI/O = VSS to VCC

—7

15 mA CS1 = VIL, CS2 = VIH, II/O = 0 mA

others = VIH/VIL

— 30 45 mA Min cycle, duty = 100%,

CS1 = VIL, CS2 = VIH, II/O = 0 mA

others = VIH/VIL

—3

5

mA Cycle time = 1 µs, duty = 100%, II/O = 0 mA

CS1 ≤ 0.2 V, CS2 ≥ VCC – 0.2 V,

VIH ≥ VCC – 0.2 V, VIL ≤ 0.2 V

—1

3

mA CS1 = VIH, CS2 = VIL

I SB1

—2

50 µA CS1 ≥ VCC – 0.2 V, CS2 ≥ VCC – 0.2 V or

0 V ≤ CS2 ≤ 0.2 V, 0 V ≤ Vin

Output low voltage

VOL

— — 0.4 V

IOL = 2.1 mA

Output high voltage

VOH

2.4 — — V IOH = –1.0 mA

Notes: 1. Typical values are at VCC = 5.0 V, Ta = +25°C and not guaranteed.

Capacitance (Ta = 25°C, f = 1.0 MHz)

Parameter

Symbol Min Typ

Input capacitance*1

Cin

—

—

Input/output capacitance*1

CI/O

—

—

Note: 1. This parameter is sampled and not 100% tested.

Max

5

7

Unit

pF

pF

Test conditions

Vin = 0 V

VI/O = 0 V

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