HMC864 데이터 시트보기 (PDF) - Hittite Microwave

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HMC864

GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 24 - 29.5 GHz

Hittite Microwave 

v01.0110

3

Gain & Power vs.

Supply Current @ 27 GHz

35

Gain (dB)

33

P1dB (dBm)

Psat (dBm)

31

29

27

25

700

720

740

760

780

800

Idd (mA)

HMC864

GaAs pHEMT MMIC 1 WATT

POWER AMPLIFIER, 24 - 29.5 GHz

Gain & Power vs.

Supply Voltage @ 27 GHz

35

Gain (dB)

33

P1dB (dBm)

Psat (dBm)

31

29

27

25

5

5.2

5.4

5.6

5.8

6

Vdd (V)

Power Dissipation

6

24 GHz

25 GHz

5.5

26 GHz

27 GHz

28 GHz

5

4.5

4

-15

-12

-9

-6

-3

0

3

6

INPUT POWER (dBm)

Absolute Maximum Ratings

Drain Bias Voltage (Vd)

RF Input Power (RFIN)

Channel Temperature

Continuous Pdiss (T= 85 °C)

(derate 75 mW/°C above 85 °C)

Thermal Resistance

(channel to die bottom)

Storage Temperature

Operating Temperature

+6.5V

+26 dBm

150 °C

4.85 W

13.4 °C/W

-65 to +150 °C

-55 to +85 °C

Typical Supply Current vs. Vdd

Vdd (V)

Idd (mA)

+5.0

750

+5.5

750

+6.0

750

Note: Amplifier will operate over full voltage ranges shown

above Vgg adjusted to achieve Idd = 750mA at +5.5V

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

3 - 162

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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