RF1S40N10 데이터 시트보기 (PDF) - Fairchild Semiconductor
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RF1S40N10 Datasheet PDF : 6 Pages
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RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
RFG40N10, RFP40N10,
RF1S40N10, RF1S40N10SM
100
100
±20
40
100
Figures 4, 12, 13
160
1.07
-55 to 175
300
260
UNITS
V
V
V
A
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. TJ = 25oC to 150oC.
2. Repetitive Rating: pulse width limited by maximum junction temperature.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BV DSS
V GS(TH)
I DSS
I GSS
r DS(ON)
t ON
t d(ON)
tr
t d(OFF)
tf
t OFF
Q g(TOT)
Q g(10)
Q g(TH)
RθJC
R θ JA
ID = 250µA, VGS = 0V (Figure 9)
VGS = VDS, ID = 250µA (Figure 8)
VDS = 80V,
VGS = 0V
TC = 25oC
TC = 150oC
VGS = ±20V
ID = 40A, VGS = 10V (Figure 7)
VDD = 50V, ID = 20A,
RL = 2.5Ω, VGS = 10V, RGS = 4.2 Ω
(Figure 11)
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 80V,
ID = 40A,
RL = 2.0Ω
(Figures 11)
TO-247
TO-220AB and TO-263AB
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
SYMBOL
TEST CONDITIONS
V SD
ISD = 40A
t rr
ISD = 40A, dISD/dt = 100A/µs
MIN TYP MAX UNITS
100
-
-
V
2
-
4
V
-
-
1
µA
-
-
50
µA
-
-
±100
nA
-
-
0.040
Ω
-
-
80
ns
-
17
-
ns
-
30
-
ns
-
42
-
ns
-
20
-
ns
-
-
100
ns
-
-
300
nC
-
-
150
nC
-
-
7.5
nC
-
-
0.94 oC/W
-
-
30
oC/W
-
-
62
oC/W
MIN
TYP
MAX UNITS
-
-
1.5
V
-
-
200
ns
©2002 Fairchild Semiconductor Corporation
RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Rev. C
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