RF1S40N109A 데이터 시트보기 (PDF) - Fairchild Semiconductor
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RF1S40N109A Datasheet PDF : 6 Pages
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RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
40
32
24
16
8
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
100
VDSS(MAX) = 100V
10
TC = 25oC
SINGLE PULSE
TJ = MAX RATED
DC OPERATION
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
100
PULSE DURATION = 80µs
80
= 7V
V GS
DUTY CYCLE = 0.5% MAX
TC = 25oC
60
VGS = 6V
40
20
0
0
VGS = 5V
VGS = 4V
2
4
6
8
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. SATURATION CHARACTERISTICS
100
10
STARTINGSTJTA=R1T5I0NGoCTJ = 25 oC
If R = 0
tAV = (L)(IAS)/(1.3 RATED BVDSS - VDD)
If R ≠ 0
1 tAV = (L/R)LN[(IAS*R)/(1.3 RATED BVDSS - VDD) + 1]
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to application notes AN9321 and AN9322.
FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
80 VDD = 15V
60
-55oC
25oC
175oC
40
20
0
0
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 6. TRANSFER CHARACTERISTICS
©2002 Fairchild Semiconductor Corporation
RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Rev. C
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