HN58V65A 데이터 시트보기 (PDF) - Renesas Electronics

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HN58V65A

64 k EEPROM (8-kword × 8-bit) Ready/Busy Function, RES Function (HN58V66A)

Renesas Electronics 

HN58V65A Series

HN58V66A Series

64 k EEPROM (8-kword × 8-bit)

Ready/Busy Function, RES Function (HN58V66A)

REJ03C0149-0300Z

(Previous ADE-203-539B (Z) Rev. 2.0)

Rev. 3.00

Dec. 04. 2003

Description

Renesas Technology's HN58V65A series and HN58V66A series are a electrically erasable and

programmable EEPROM’s organized as 8192-word × 8-bit. They have realized high speed, low power

consumption and high relisbility by employing advanced MNOS memory technology and CMOS process

and circuitry technology. They also have a 64-byte page programming function to make their write

operations faster.

Features

• Single supply: 2.7 to 5.5 V

• Access time:

 100 ns (max) at 2.7 V ≤ VCC < 4.5 V

 70 ns (max) at 4.5 V ≤ VCC ≤ 5.5 V

• Power dissipation:

• Active: 20 mW/MHz (typ)

• Standby: 110 µW (max)

• On-chip latches: address, data, CE, OE, WE

• Automatic byte write: 10 ms (max)

• Automatic page write (64 bytes): 10 ms (max)

• Ready/Busy

• Data polling and Toggle bit

• Data protection circuit on power on/off

• Conforms to JEDEC byte-wide standard

• Reliable CMOS with MNOS cell technology

Rev.3.00, Dec. 04.2003, page 1 of 26

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