HN58V65A 데이터 시트보기 (PDF) - Renesas Electronics
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HN58V65A
Renesas Electronics
HN58V65A Datasheet PDF : 28 Pages
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HN58V65A Series, HN58V66A Series
Operation Table
Operation
CE
OE
WE
RES*3
Read
Standby
VIL
VIL
VIH
VH*1
VIH
×*2
×
×
Write
VIL
VIH
VIL
VH
Deselect
VIL
VIH
VIH
VH
Write Inhibit
×
×
VIH
×
×
VIL
×
×
Data Polling
VIL
VIL
VIH
VH
Program reset
×
×
×
VIL
Notes: 1. Refer to the recommended DC operating conditions.
2. × : Don’t care
3. This function supported by only the HN58V66A series.
RDY/Busy
High-Z
High-Z
High-Z to VOL
High-Z
VOL
High-Z
I/O
Dout
High-Z
Din
High-Z
Dout (I/O7)
High-Z
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Power supply voltage relative to VSS
Input voltage relative to VSS
Operating temperature range *2
VCC
−0.6 to +7.0
V
Vin
−0.5*1 to +7.0*3
V
Topr
0 to +70
°C
Storage temperature range
Tstg
−55 to +125
°C
Notes: 1. Vin min : −3.0 V for pulse width ≤ 50 ns.
2. Including electrical characteristics and data retention.
3. Should not exceed VCC + 1 V.
Recommended DC Operating Conditions
Parameter
Symbol
Min
Typ
Supply voltage
Input voltage
Operating temperature
VCC
VSS
VIL
VIH
VH*4
Topr
2.7
0
0
−0.3*1
1.9*2
VCC −0.5
0
Notes: 1. VIL min: −1.0 V for pulse width ≤ 50 ns.
2. VIH = 2.2 V for VCC = 3.6 to 5.5 V.
3. VIH max: VCC + 1.0 V for pulse width ≤ 50 ns.
4. This function is supported by only the HN58V66A series.
5. VIL = 0.8 V for VCC = 3.6 V to 5.5 V
Max
Unit
5.5
V
0
V
0.6*5
V
VCC + 0.3*3 V
VCC + 1.0 V
+70
°C
Rev.3.00, Dec. 04.2003, page 6 of 26
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