HN58V65A 데이터 시트보기 (PDF) - Renesas Electronics

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HN58V65A

64 k EEPROM (8-kword × 8-bit) Ready/Busy Function, RES Function (HN58V66A)

Renesas Electronics 

HN58V65A Series, HN58V66A Series

AC Characteristics (Ta = 0 to + 70°C, VCC = 2.7 to 5.5 V)

Test Conditions

• Input pulse levels :

0.4 V to 2.4 V (VCC = 2.7 to 3.6 V), 0.4 V to 3.0 V (VCC = 3.6 to 5.5 V)

0 V to VCC (RES pin*2)

• Input rise and fall time : ≤ 5 ns

• Input timing reference levels : 0.8, 1.8 V

• Output load : 1TTL Gate +100 pF

• Output reference levels : 1.5 V, 1.5 V

Read Cycle 1 (2.7 V ≤ VCC < 4.5 V)

HN58V65A/HN58V66A

-10

Parameter

Symbol Min

Max

Address to output delay

tACC



100

CE to output delay

tCE



100

OE to output delay

tOE

10

50

Address to output hold

tOH

0



OE (CE) high to output float*1 tDF

0

40

RES low to output float*1, 2

tDFR

0

350

RES to output delay*2

tRR

0

450

Unit

ns

ns

ns

ns

ns

ns

ns

Test conditions

CE = OE = VIL, WE = VIH

OE = VIL, WE = VIH

CE = VIL, WE = VIH

CE = OE = VIL, WE = VIH

CE = VIL, WE = VIH

CE = OE = VIL, WE = VIH

CE = OE= VIL, WE = VIH

Rev.3.00, Dec. 04.2003, page 8 of 26

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