HN58V65A-SR 데이터 시트보기 (PDF) - Renesas Electronics

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HN58V65A-SR

64k EEPROM (8-kword × 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version

Renesas Electronics 

HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series

Capacitance (Ta = +25°C, f = 1 MHz)

Parameter

Symbol

Min

Typ

Max

Unit

Input capacitance

Output capacitance

Cin*1





6

pF

Cout*1





12

pF

Note: 1. This parameter is sampled and not 100% tested.

Test conditions

Vin = 0 V

Vout = 0 V

AC Characteristics

(Ta = −40 to +85°C, VCC = 2.7 to 5.5 V: HN58V65AI/HN58V66AI,

Ta = −20 to +85°C, VCC = 2.7 to 5.5 V: HN58V65A-SR/HN58V66A-SR)

Test Conditions

• Input pulse levels : 0.4 V to 2.4 V (VCC = 2.7 to 3.6 V), 0.4 V to 3.0 V (VCC = 3.6 to 5.5 V)

0 V to VCC (RES pin*2)

• Input rise and fall time : ≤ 5 ns

• Input timing reference levels : 0.8, 1.8 V

• Output load : 1TTL Gate +100 pF

• Output reference levels : 1.5 V, 1.5 V

Read Cycle 1 (2.7 ≤ VCC < 4.5 V)

HN58V65AI/HN58V66AI

HN58V65A-SR/HN58V66A-SR

-10

Parameter

Symbol Min

Max

Unit Test conditions

Address to output delay

tACC



CE to output delay

tCE



OE to output delay

tOE

10

Address to output hold

tOH

0

OE (CE) high to output float*1 tDF

0

RES low to output float*1, 2

tDFR

0

RES to output delay*2

tRR

0

100

ns CE = OE = VIL, WE = VIH

100

ns OE = VIL, WE = VIH

50

ns CE = VIL, WE = VIH



ns CE = OE = VIL, WE = VIH

40

ns CE = VIL, WE = VIH

350

ns CE = OE = VIL, WE = VIH

450

ns CE = OE= VIL, WE = VIH

Rev.3.00, Feb.02.2004, page 7 of 26

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